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XThin(R) LEDs
CXXXXT420-SXX00-A
Cree's XThin LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 175 microns in height and require a low forward voltage. Cree's XTTM chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.
FEATURES
* * * * XThin LED Performance - 450 nm - 24 mW min. Low Forward Voltage Single Wire Bond Structure Class 2 ESD Rating
APPLICATIONS
* * * * LCD Backlighting Digital Camera Flash for Mobile Appliance LED Video Displays Audio Product Display Lighting
CXXXXT420-SXX00-A Chip Diagram
Top View
Bottom View
Die Cross Section
R3DB Rev. Datasheet: CP
G*SiC LED Chip 420 x 420 m Gold Bond Pad 105 m Diameter
Backside Metalization Cathode (-) SiC Substrate t = 175 m
Anode (+)
Subject to change without notice. www.cree.com
Maximum Ratings at TA = 25C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM)
Note 2 Note 2
CXXXXT420-SXX00-A 60 mA 200 mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2
Note 3
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at TA = 25C, If = 20 mA Part Number Forward Voltage (Vf, V) Min. C450XT420-Sxx00-A Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Thickness (m) (Au/Sn)
Note 4
Reverse Current [I(Vr=5V), A] Max. 2
Full Width Half Max (D, nm) Typ. 20 CXXXXT420-SXX00-A Dimension 368 x 368 250 x 250 420 x 420 175 105 1.2 330 x 330 1.7 Tolerance 25 25 25 15 -5, +15 0.5 25 0.3
Typ. 3.1
Max. 3.6
2.6
Notes:
1.
2. 3.
4. 5. 6. 7.
Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree XThin Applications Note for more assembly process information. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282C. See XBright(R) Applications Note for detailed packaging recommendations. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. See Cree XBright Applications Note for more information. XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach. Specifications are subject to change without notice.
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC, XBright and XThin are registered trademarks, and XT is a trademark of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
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CPR3DB Rev. -
Standard Bins for CXXXXT420-SXX00-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die form only one bin. Sorted die kit (CXXXXT420-SXX00-A) orders may be filled with any or all bins (CxxxXT420-01xx-A) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA.
XT-24 Radiant Flux 30.0 mW 27.0 mW 24.0 mW
C450XT420-0125-A C450XT420-0121-A C450XT420-0117-A
C450XT420-S2400-A
C450XT420-0126-A C450XT420-0122-A C450XT420-0118-A C450XT420-0127-A C450XT420-0123-A C450XT420-0119-A C450XT420-0128-A C450XT420-0124-A C450XT420-0120-A
445 nm
447.5 nm
450 nm Dominant Wavelength
452.5 nm
455 nm
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC, XBright and XThin are registered trademarks, and XT is a trademark of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
3
CPR3DB Rev. -
Characteristic Curves
These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins.
Forward Current vs Forward Voltage
60
Wavelength Shift vs Forward Current
2.00
50
1.00
40
Shift (nm)
If (mA)
30
0.00
20
-1.00
10
0
-2.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
10.0
20.0
30.0
40.0
50.0
60.0
Vf (V)
If (mA)
Relative Intensity vs Forward Voltage
100
250
Relative Intensity vs Peak Wavelength
80
Relative Intensity (%)
200
% Relative Intensity
60
150
40
100
50
20
0
0
10
20
30
40
50
60
400
500
600
If (mA)
Wavelength (nm)
Copyright (c) 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC, XBright and XThin are registered trademarks, and XT is a trademark of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com
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CPR3DB Rev. -

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